TY - JOUR
T1 - MoS2-graphene heterostructures as efficient organic compounds sensing 2D materials
AU - Pham, Tung
AU - Ramnani, Pankaj
AU - Villarreal, Claudia C.
AU - Lopez, Jhoann
AU - Das, Protik
AU - Lee, Ilkeun
AU - Neupane, Mahesh R.
AU - Rheem, Youngwoo
AU - Mulchandani, Ashok
N1 - Publisher Copyright:
© 2018
PY - 2019/2
Y1 - 2019/2
N2 - In this work, electrical properties and application for volatile organic compounds detection of molybdenum disulfide (MoS2)−graphene (MS/G) heterostructure is investigated. The MS/G heterostructure is synthesized by physical stacking of single-layer (SL) MoS2 over SL graphene. The difference in the work-functions between the MoS2 and graphene leads to electron transfer from MoS2 to graphene, which changes FET charge neutrality point (VCNP) of graphene by as much as 30 V and increases the electron-to-hole ratio in graphene. This charge transport phenomenon is further confirmed by shifting of Raman G peak and quenching of photoluminescence intensity by 50% of MoS2 in the heterostructure. Ultraviolet photoelectron spectroscopy reveals a 0.1 eV upshift of the Fermi level of graphene in MS/G, which is consistent with the electrical double-layer capacitance versus the electrode potential measurement and energy band alignment predicted by first-principle simulations. The heterogenity induced charge transfer in the heterostructure of MS/G results in outstanding performance in chemical sensing. The MS/G FET shows improved stability in dry air with negligible shifting of VCNP, as compared to graphene FET. In the detection of toluene, the MS/G FET-based sensor shows higher sensitivity and superior signal-to-noise ratio compared to MoS2 or graphene individually.
AB - In this work, electrical properties and application for volatile organic compounds detection of molybdenum disulfide (MoS2)−graphene (MS/G) heterostructure is investigated. The MS/G heterostructure is synthesized by physical stacking of single-layer (SL) MoS2 over SL graphene. The difference in the work-functions between the MoS2 and graphene leads to electron transfer from MoS2 to graphene, which changes FET charge neutrality point (VCNP) of graphene by as much as 30 V and increases the electron-to-hole ratio in graphene. This charge transport phenomenon is further confirmed by shifting of Raman G peak and quenching of photoluminescence intensity by 50% of MoS2 in the heterostructure. Ultraviolet photoelectron spectroscopy reveals a 0.1 eV upshift of the Fermi level of graphene in MS/G, which is consistent with the electrical double-layer capacitance versus the electrode potential measurement and energy band alignment predicted by first-principle simulations. The heterogenity induced charge transfer in the heterostructure of MS/G results in outstanding performance in chemical sensing. The MS/G FET shows improved stability in dry air with negligible shifting of VCNP, as compared to graphene FET. In the detection of toluene, the MS/G FET-based sensor shows higher sensitivity and superior signal-to-noise ratio compared to MoS2 or graphene individually.
UR - http://www.scopus.com/inward/record.url?scp=85055749788&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2018.10.079
DO - 10.1016/j.carbon.2018.10.079
M3 - Artículo
AN - SCOPUS:85055749788
SN - 0008-6223
VL - 142
SP - 504
EP - 512
JO - Carbon
JF - Carbon
ER -