An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

Alfredo Arnaud, Rafael Puyol, Alfonso Chacon-Rodriguez, Matias Miguez, Joel Gak

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

2 Citas (Scopus)

Resumen

In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.

Idioma originalInglés
Título de la publicación alojada2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas49-52
Número de páginas4
ISBN (versión digital)9781728104522
DOI
EstadoPublicada - 14 mar 2019
Publicado de forma externa
Evento10th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2019 - Armenia, Colombia
Duración: 24 feb 201927 feb 2019

Serie de la publicación

Nombre2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings

Conferencia

Conferencia10th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2019
País/TerritorioColombia
CiudadArmenia
Período24/02/1927/02/19

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