30-Gb/s optical link combining heterogeneously integrated III-V/Si photonics with 32-nm CMOS circuits

Nicolas Dupuis; Benjamin G. Lee; Jonathan E. Proesel; Alexander Rylyakov; Renato Rimolo-Donadio; Christian W. Baks; Abhijeet Ardey; Clint L. Schow; Anand Ramaswamy; Jonathan E. Roth; Robert S. Guzzon; Brian Koch; Daniel K. Sparacin; Greg A. Fish

doi:10.1109/JLT.2014.2364551

30-Gb/s optical link combining heterogeneously integrated III-V/Si photonics with 32-nm CMOS circuits

Nicolas Dupuis, Benjamin G. Lee, Jonathan E. Proesel, Alexander Rylyakov, Renato Rimolo-Donadio, Christian W. Baks, Abhijeet Ardey, Clint L. Schow, Anand Ramaswamy, Jonathan E. Roth, Robert S. Guzzon, Brian Koch, Daniel K. Sparacin, Greg A. Fish

Escuela de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

13 Citas (Scopus)

Resumen

We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.

Idioma original	Inglés
Número de artículo	6936315
Páginas (desde-hasta)	657-662
Número de páginas	6
Publicación	Journal of Lightwave Technology
Volumen	33
N.º	3
DOI	https://doi.org/10.1109/JLT.2014.2364551
Estado	Publicada - 1 feb 2015

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Dupuis, N., Lee, B. G., Proesel, J. E., Rylyakov, A., Rimolo-Donadio, R., Baks, C. W., Ardey, A., Schow, C. L., Ramaswamy, A., Roth, J. E., Guzzon, R. S., Koch, B., Sparacin, D. K., & Fish, G. A. (2015). 30-Gb/s optical link combining heterogeneously integrated III-V/Si photonics with 32-nm CMOS circuits. Journal of Lightwave Technology, 33(3), 657-662. Artículo 6936315. https://doi.org/10.1109/JLT.2014.2364551

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title = "30-Gb/s optical link combining heterogeneously integrated III-V/Si photonics with 32-nm CMOS circuits",

abstract = "We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.",

keywords = "CMOS integrated circuits, Optical receivers, Optical transmitters",

author = "Nicolas Dupuis and Lee, {Benjamin G.} and Proesel, {Jonathan E.} and Alexander Rylyakov and Renato Rimolo-Donadio and Baks, {Christian W.} and Abhijeet Ardey and Schow, {Clint L.} and Anand Ramaswamy and Roth, {Jonathan E.} and Guzzon, {Robert S.} and Brian Koch and Sparacin, {Daniel K.} and Fish, {Greg A.}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

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day = "1",

doi = "10.1109/JLT.2014.2364551",

language = "Ingl{\'e}s",

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Dupuis, N, Lee, BG, Proesel, JE, Rylyakov, A, Rimolo-Donadio, R, Baks, CW, Ardey, A, Schow, CL, Ramaswamy, A, Roth, JE, Guzzon, RS, Koch, B, Sparacin, DK & Fish, GA 2015, '30-Gb/s optical link combining heterogeneously integrated III-V/Si photonics with 32-nm CMOS circuits', Journal of Lightwave Technology, vol. 33, n.º 3, 6936315, pp. 657-662. https://doi.org/10.1109/JLT.2014.2364551

TY - JOUR

T1 - 30-Gb/s optical link combining heterogeneously integrated III-V/Si photonics with 32-nm CMOS circuits

AU - Dupuis, Nicolas

AU - Lee, Benjamin G.

AU - Proesel, Jonathan E.

AU - Rylyakov, Alexander

AU - Rimolo-Donadio, Renato

AU - Baks, Christian W.

AU - Ardey, Abhijeet

AU - Schow, Clint L.

AU - Ramaswamy, Anand

AU - Roth, Jonathan E.

AU - Guzzon, Robert S.

AU - Koch, Brian

AU - Sparacin, Daniel K.

AU - Fish, Greg A.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.

AB - We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.

KW - CMOS integrated circuits

KW - Optical receivers

KW - Optical transmitters

UR - http://www.scopus.com/inward/record.url?scp=84923347115&partnerID=8YFLogxK

U2 - 10.1109/JLT.2014.2364551

DO - 10.1109/JLT.2014.2364551

M3 - Artículo

AN - SCOPUS:84923347115

SN - 0733-8724

VL - 33

SP - 657

EP - 662

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

IS - 3

M1 - 6936315

ER -

30-Gb/s optical link combining heterogeneously integrated III-V/Si photonics with 32-nm CMOS circuits

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